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Next-generation silicon photodiodes from Marktech pair spectral selectivity with speed and sensitivity

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Marktech Optoelectronics launched a new family of silicon photodiodes (SiPDs) that combine fast response time, high photosensitivity and low junction capacitance in cost-effective, moulded-through-hole plastic packages to bring precision spectral performance to compact, price-sensitive optical designs.

“Engineers need photodiodes that are tuned for their sensing band and still deliver speed, low noise, and value,” said Barry Jones, Silicon Detector Business Manager at Marktech. “Our latest SiPDs provide tightly targeted spectral behaviour – either minimal to no visible response for clean NIR detection at 940 nm or a precise 525 nm peak for blue-green sensing – together with low junction capacitance and fast response that strengthen performance in demanding optical sensing applications.”

The devices are made in at Marktech’s Simi Valley, California facility, with the final-packaging done in Japan, in collaboration with Optrans Corporation.

Devices highlights include:

MTD3910GC-F3 & MTD3910G-F3 — NIR 940 nm SiPDs with Minimal/No Visible Sensitivity

  • 940 nm spectral focus: Peak responsivity at 940 nm with strong suppression of visible light
  • Visible-light suppression options:
    • MTD3910G-F3: Enhanced filtering; virtually zero sensitivity below 775 nm
    • MTD3910GC-F3: No responsiveness below 675 nm and only minute sensitivity between 675–775 nm
  • Package: Molded through-hole plastic; small active area for fast response and low junction capacitance
  • Applications: Short-run plastic-fiber communications, security sensors, IR camera light sensing, oximetry/PPG, barcode scanners, rangefinders, and IR laser monitoring.

Marktech Optoelectronics

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