Advanced Power Electronics Corp (USA), a manufacturer of MOS power semiconductors for DC-DC power conversion applications, has announced the new AP6922GMT-HF-3, a space-saving dual MOSFET for synchronous buck converter applications, with both the high-side (control) FET and low-side (synchronous) FET in one single 5x6mm PMPAK package.
AP6922GMT-HF-3 is a rugged device combining fast switching, low on-resistance and high cost-effectiveness. The control MOSFET (CH-1) has a drain-source voltage rating of 30V, a maximum on-resistance of 8.5mΩ, and a continuous drain current rating at 25degC of 15A, chosen to optimise switching performance.
The synchronous MOSFET (CH-2) also has a drain-source voltage rating of 30V and a continuous drain current rating at 25degC of 25.7A, with a maximum on-resistance of 3.8mΩ to minimise conduction losses. The reduced parasitic inductances (as a result of the short internal conduction paths) also contribute to improved performance.
The devices are in an industry-standard 5x6mm package and are RoHS-compliant and halogen-free.