KIOXIA has started sample shipments of 1Tb (terabit) triple-level cell (TLC) memory devices incorporating its 9th-generation BiCS FLASH 3D flash memory technology. The aim to support applications such as AI-enabled PCs and smartphones with low- to mid-level storage capacities that require high performance.
KIOXIA continues to pursue a dual-axis strategy based on its innovative CMOS directly Bonded to Array (CBA) technology, whereby each CMOS wafer and cell array wafer is manufactured separately under individually optimised conditions and then bonded together. The company also uses On-Pitch Select Gate Drain (OPS) technology, which allows the shortening of the bit line and reduces the word line capacitance by removing unused memory holes.
Under its unique dual-axis strategy, KIOXIA is simultaneously advancing two distinct product lines: its 9th-generation solutions, which deliver high performance at relatively low cost of investing, and its 10th-generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.
The new 9th-generation BiCS FLASH 1Tb TLC devices, developed using a 230-layer stacking process based on 8th-generation BiCS FLASH technology and advanced CMOS technology. It delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices, matching the performance of 10th-generation devices.
