GlobalFoundries and RAAAM Memory Technologies have announced joint development of next-generation GCRAM technology and test chip on FDX FD-SOI platform. The collaboration targets to enable the densest standard CMOS on-chip memory solution for the FDX platform widely used for advanced AI chips, by delivering 40% area shrink and up to 60% power reduction compared to commodity SRAM.
RAAAM Memory Technologies is known for its advanced of on-chip memory solutions. Using its patented Gain-Cell RAM (GCRAM) technology, the companies have co-designed the GCRAM bitcell using “pushed” design rules on FDX technology, achieving 40% memory area shrink and up to 60% memory power reduction compared to SRAM. The two already have a jointly developed and taped out GCRAM test chip.
“The successful tape-out of our GCRAM test vehicle on GF’s FDX platform is a testament to the powerful synergy between RAAAM’s memory innovations and GlobalFoundries’ manufacturing excellence,” said Robert Giterman, CEO and co-founder of RAAAM Memory Technologies. “Our GCRAM technology allows semiconductor companies to significantly increase their on-chip memory capacity or reduce the silicon area while keeping the same amount of on-chip memory, while the ultra-low leakage of FD-SOI technology extends data retention, enabling designers to unlock substantial energy savings for edge AI devices”
Customers can expect the first commercial chips in early 2027.
