Toshiba Electronics Europe launches a 600V N-channel super junction power MOSFET in the DTMOSVI 600V process and housed in a compact DFN8×8 package. Optimised gate design and compact package will help engineers reduce the size of end equipment and improve efficiency.
The TK057V60Z offers a drain-source voltage (VDSS) of 600V with a drain current (ID) capability up to 40A. The typical drain-source on-resistance (RDS(ON)) is as low as 0.047Ω (0.057Ω max.), and the typical gate drain charge (Qgd) can be as low as 15nC. The high-efficiency device and compact package maximise power density in industrial equipment. Applications include switched-mode power supplies for data centre servers, uninterruptible power supplies, and photovoltaic power conditioners.
In the DTMOSVI 600V series, which includes the TK057V60Z, Toshiba has optimised the gate design and manufacturing process to achieve approximately a 36% reduction in the figure-of-merit (FoM), defined as RDS(ON) x Qg, and approximately a 52% reduction in RDS(ON) x Qdg, compared to the existing generation DTMOSIV-H series with the same voltage rating. These improvements reduce conduction loss, drive loss, and switching loss, providing significant efficiency improvements in power supply circuits. Furthermore, the adoption of the small surface-mount DFN8×8 package enables engineers to reduce the size of their end equipment. A Kelvin source pin enables proper gate control and helps avoid the impact of parasitic inductance at the power source pin.
Toshiba plans to continue expanding its DTMOSVI 600V series product portfolio to improve the efficiency of power supplies in industrial equipment.
