SemiSouth Laboratories has announced its 30th US patent granted by the US Patent and Trademark Office. SemiSouth designs and manufactures silicon-carbide (SiC) power semiconductor transistors and diodes, which are rapidly gaining market share in the solar, UPS, traction, wind, automotive and aerospace industries for their superior performance in high-efficiency, harsh-environment power applications.
US Patent 8,169,022 was issued on May 1, 2012, and is entitled “Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making.” It was co-invented by Dr. Michael Mazzola, a co-founder of SemiSouth in 2000 when the company spun off of Mississippi State University.
“The underlying technology in this patent allows SemiSouth to fine tune its already performance-leading vertical channel junction field effect transistors and diodes to get ever closer to the unipolar theoretical limit. Customers can expect even better value from the products based on this patent,” said Mazzola.