Next Generation 25W, 28V GaN HEMT delivers more gain and efficiency

Wolfspeed launches next generation 25W, 28V GaN HEMT that delivers more gain and efficiency.

The new 28V GaN HEMT devices are developed using Wolfspeed’s proven 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs.

Wolfspeed’s CG2H40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down pill packages.

The new GaN HEMTs deliver higher frequency operation to 8GHz (from 6GHz), an additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating efficiency compared to Wolfspeed’s earlier generation devices.

For large signal models or to request a sample, contact Wolfspeed, A Cree Company.


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