Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs), offers a plastic-packaged 50V/60W RF GaN HEMT. Supplied in miniature (4.5mm x 6.5mm), economical, plastic SMT packages, this device is ideal for LTE, small cell base transceiver station (BTS), radar, public safety radio, and other communications applications.
The CGHV27060MP is a 50V/60W broadband GaN HEMT with both linear and pulsed applications circuits and no internal input or output match, which allows it to support a wide range of frequencies spanning UHF through 2.7GHz. The GaN HEMT is well suited for LTE base station amplifiers with 10–15W average power and high efficiency topologies, such as Doherty or Class A, B, and F amplifiers. Utilizing an S-Band radar circuit, the 50V device provides 16.5dB gain, 70% drain efficiency, and 80W output power at pulsed PSAT with a 100μs pulse width and 10% duty cycle. At 14W PAVE, the device delivers 18.5dB gain, 35% efficiency. This miniature plastic-packaged transistor is also capable of 65W of continuous wave (CW) output power when used in high efficiency amplifier designs.