Advanced Power Electronics Corp (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has announced its highly cost-effective AP9412A family of N-channel enhancement-mode power MOSFETs which feature fast switching and low on-resistance.
Available in SO-8, TO-252 and isolated TO-220CFM packages, the devices have a minimum drain-source breakdown voltage of 30V and a maximum Rds(on) of just 6mΩ. Other characteristics depend on the package chosen. All parts are extremely easy to drive. They are suitable for a wide range of industrial and commercial applications including low voltage applications such as DC/DC converters.
“We specialise in providing parts that simplify the design engineering process by delivering excellent performance at an attractive price level. These new devices are a perfect example – full documentation is available at: http://www.a-powerusa.com/docs/AP9412AGM-3.pdf (SO-8), http://www.a-powerusa.com/docs/AP9412AGH-3.pdf (TO-252) and http://www.a-powerusa.com/docs/AP9412AGI-3.pdf (TO-220CFM),” said Ralph Waggitt, President/CEO, Advanced Power Electronics Corp (USA).
