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New Low CxR PhotoMOS With Optimized On-Resistance For Currents Of Up To 1A

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The new CxR10 PhotoMOS relays belong to the successful Low CxR series PhotoMOS, with an optimized, i.e. low, product of C and R. Especially measurement applications require the smallest possible output capacitance C at the open contact and at the same time a low on-resistance R at the closed contact for high-frequency loads.

Optimizing the capacitance and the resistance component in the transistors makes this possible. The most advanced MOSFET technology makes it possible to combine a very low contact resistance of 0.18 Ohms (typical) with a low output capacitance of 37.5pF (typical) at the same time.

The new types are available in the well proven ultra-miniature VSSOP and SSOP housing types. Furthermore, the new CxR10 PhotoMOS have a very short response time (0.2ms typical), a high I/O isolation (max. 1.5kVAC for SSOP), and a very low leakage current (< nA). The maximum switching voltage is 30V for both types, AC and/or DC.

Panasonic Electric Works
www.panasonic-electric-works.co.uk

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