Vishay broadens its optoelectronics portfolio with two new 940nm high-speed infrared emitting diodes in compact 3.2mm x 2.51mm x 1.2mm clear SMD side-view packages.
The new diodes VSMY14940 and VSMB14940 combine high radiant intensity and optical power with fast switching times. They are available at distributor Rutronik as of now. Based on GaAIAs surface emitter chip technology, the VSMY14940 offers extremely high radiant intensity to 82mW/sr at a 70mA drive current, radiant power of 40mW, fast switching times of 10ns, and forward voltage of 1,48V.
In applications where lower intensity is needed, the VSMB14940 is built on GaAIAs MQW (multi quantum well) technology for a radiant intensity of 35mW/sr, radiant power of 28mW, switching times of 15ns, and low forward voltage of 1.33V. Thanks to the extremely low profiles and narrow ±9° angles of half intensity, the two infrared emitting diodes are ideal for remote control applications in space-constrained end products, e.g. mobile devices like smartphones and tablets. Furthermore, they can be applied in high-intensity emitters for light barriers and smoke detectors. Vishay’s new diodes are RoHS-compliant, halogen-free and “Vishay Green”.
They provide a moisture sensitivity level (MSL) of 3 in accordance with J-STD-020. Further information: www.rutronik.com/2f103b8a.l