GaN Systems added another device to its range of E-mode GaN-on-Silicon high power transistors based on its three core proprietary technologies. The new GaN high-power enhancement-mode device, designated the GS65516T, boasts the highest current capability on the market at 60A and further expands GaN Systems’s range of power switching semiconductors.
The GS65516T 650V E-mode power switch features GaN Systems’s new proprietary topside cooling configuration announced in March this year, which allows the device to be cooled using familiar and conventional heat sink or fan cooling techniques. It is based on the company’s ultra-low FOM
Island Technology die design, packaged in low inductance and thermally efficient GaNPX packaging and measures 9.0mm x 7.6mm x 0.45mm. Additional features include reverse current capability, integral source sense and zero reverse recovery loss.