Advanced Power Electronics Corp (USA) launched an asymmetric-dual N-channel enhancement mode power MOSFET targeting synchronous buck DC/DC converter power designs.
Packaged in a small 3mm square PMPAK 3×3, the AP6950GYT comprises a high-side control MOSFET (CH-1) and a low-side synchronous MOSFET (CH-2), providing a compact solution optimised for synchronous buck applications. Drain-source breakdown voltage (BVDSS) for both channels is 30V, while on-resistance is low at 18mΩ (CH-1) and 10.5mΩ (CH-2)
“Our MOSFETs provide the designer with cost-effective performance whilst retaining the best combination of fast switching, ruggedized device design, and low on resistance,” said Ralph Waggitt, President/CEO of Advanced Power Electronics Corp (USA).
Devices are RoHS-compliant and halogen-free; more data is available at www.a-powerusa.com
Advanced Power Electronics Corp. USA
+1 (408) 717-4231