X-FAB Silicon Foundries, the specialty foundry of analogue and mixed-signal semiconductors, now offers its second-generation XT018 superjunction high-voltage (HV) primitive devices, covering voltages from 45V to 375V. Applications include medical ultrasound transmitter/receiver ICs and AC line powered IoT sensors, among others. “The qualification of our leading 180 nm BCD-on-SOI technology platform up to 400 V is a big step for X-FAB and our customers. With the flexibility to freely float low and high-voltage primitive devices, our customers will be empowered to design a wide variety of new innovative products," said Joerg Doblaski, X-FAB’s CTO. The new complementary NMOS/PMOS devices are based on the company’s XT018 advanced 180 nm BCD-on-SOI platform with deep trench isolation (DTI). Fully qualified for an extended temperature range of -40\u02daC to +175\u02daC, they can be incorporated into automotive AEC-Q100 Grade 0 products. They deliver industry-leading on-resistance (R(ds)on) figures, while still providing robust safe-operating areas for R(ds)on, Idsat and Vt. The complete voltage range up to 375 V is covered via use of a single process module.BCD-on-SOI technologies offer more benefits over bulk BCD technologies, including effectively latch-up free circuits, enhanced EMC performance and simplified handling of below ground transients. BCD-on-SOI also allows significant die size area reductions, resulting in cost advantages over bulk BCD.With this, customers can now design highly-integrated ICs that can be powered directly from 230V AC mains. This opens up an alternative power option to the increasing number of IoT edge nodes – removing the need for batteries. Medical ultrasound transmitter/receiver ICs require well-matched HV NMOS and PMOS devices in terms of their R(ds)on and Idsat. In response to this, X-FAB has also released a new low R(ds)on PMOS module. This module comes with new PMOS primitive devices capable of supporting operating voltages up to 235V. These HV PMOS primitive devices feature a 40% reduction in R(ds)on compared to regular second generation superjunction PMOS devices.