Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has announced a new dual N-channel enhancement-mode power MOSFET well-suited for battery applications.
The AP9922AGEO-HF-3 device supports 1.8V gate drive and features a low on-resistance of 18mΩ, a drain-source breakdown voltage of 20V and a continuous drain current of 6A. RoHS-compliant and halogen-free, the device is available in the small and thin TSSOP-8 package.
Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “We specialise in providing the designer with the best combination of fast switching, ruggedness, ultra low on-resistance and cost-effectiveness. As designers of battery-powered applications continue to focus on battery life, it becomes increasingly more important to address the need to manage the battery efficiently.”
More data at www.a-powerusa.com/docs/AP9922AGEO-3.pdf
About Advanced Power Electronics Corp.
Established in Taiwan in 1998, Advanced Power Electronics Corporation (APEC) has become a leading supplier of MOS power discretes, IGBTs and Power ICs which enable cost-effective efficient solutions for new and existing power applications. The company’s wide range of solutions broadly targets the computing, consumer electronics, display, communications and industrial segments. ISO-approved, Advanced Power Electronics Corp. (USA)’s commitment to consistent quality assurance and the increased economies of scale has seen the company increase in revenue – and trade profitably each year since its foundation – and it has been ranked as one of the world’s top fifteen power transistor suppliers by iSuppli.
For further information:
Ralph Waggitt,
President/CEO, Advanced Power Electronics Corp. (USA),
Tel: +1 408-717-4231
Email: rwaggitt@a-powerusa.com
For press enquiries:
Nick Foot
BWW Communications
Tel.: +44 1491-636393
E-mail: nick.foot@bwwcomms.com
