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Advanced Power Electronics Corp. launches new dual N-channel enhancement-mode MOSFET for battery application


Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has announced a new dual N-channel enhancement-mode power MOSFET well-suited for battery applications.

 The AP9922AGEO-HF-3 device supports 1.8V gate drive and features a low on-resistance of 18mΩ, a drain-source breakdown voltage of 20V and a continuous drain current of 6A. RoHS-compliant and halogen-free, the device is available in the small and thin TSSOP-8 package. 

Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “We specialise in providing the designer with the best combination of fast switching, ruggedness, ultra low on-resistance and cost-effectiveness. As designers of battery-powered applications continue to focus on battery life, it becomes increasingly more important to address the need to manage the battery efficiently.”


More data at


About Advanced Power Electronics Corp.

Established in Taiwan in 1998, Advanced Power Electronics Corporation (APEC) has become a leading supplier of MOS power discretes, IGBTs and Power ICs which enable cost-effective efficient solutions for new and existing power applications. The company’s wide range of solutions broadly targets the computing, consumer electronics, display, communications and industrial segments. ISO-approved, Advanced Power Electronics Corp. (USA)’s commitment to consistent quality assurance and the increased economies of scale has seen the company increase in revenue – and trade profitably each year since its foundation – and it has been ranked as one of the world’s top fifteen power transistor suppliers by iSuppli.


For further information:

Ralph Waggitt, 

President/CEO, Advanced Power Electronics Corp. (USA),

Tel: +1 408-717-4231



For press enquiries:

Nick Foot

BWW Communications

Tel.: +44 1491-636393



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