Memory
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New service from ACAL Technology cuts SRAM lead-times and future-proofs designs against loss of supply
ACAL Technology announce a new cross-matching service designed to eliminate extended lead-times for high-speed SRAM, and to future-proof designs by second-sourcing fit, form and function alternatives to virtually any existing SRAM.
Major advances in NAND flash memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology
Toshiba Electronics Europe (TEE) has announced breakthroughs in multi-bit-per-cell technology for NAND flash memories that will bring advances in chip densities and cost savings to next generation devices. In the 32 nanometer (nm) generation, Toshiba has realized a
Numonyx design breakthrough makes it first to deliver 45nm NOR flash memory chips
Numonyx B.V. today announced the industry's first samples of multi-level cell (MLC) NOR flash memory products using 45 nanometer (nm) process technology, allowing it to significantly increase the performance of its memory products while providing high levels of




